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MEMORIES

Winbond

Founded in September 1987 and listed  on the Taiwan Stock Exchange in 1995 (STE : 2344), Winbond is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fab, a factory with a high level of intelligent technology and automation, is located in Taichung Science Park. Winbond is a specialty memory IC company. From product design, R&D and wafer fabrication to branded product marketing, Winbond strives to provide total memory solutions to its global customers. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash, Specialty DRAM and Mobile DRAM. The company is the only one in Taiwan with the capability to develop DRAM and FLASH products in-house.

Winbond

Winbond Product Portfolio Overview

Winbond Product Portfolio Overview

Mobile DRAM

Winbond Electronics - Mobile DRAM

HYPERRAM

Winbond HYPERRAM™ products provide a compact alternative to traditional pseudo-SRAM in IoT and consumer devices, automotive and industrial equipment. HYPERRAM™ enables even greater capacity, higher speed, and smaller form factor. It also offers the advantage of simplified operational usage.

HYPERRAM
Winbond HYPERRAM
Density
Speed
Data Width
Package
Operating Temp
Automotive
Voltages
32Mb
200MHz
x8
24 TFBGA
-40~85C
Yes
1.8V
32Mb
200MHz
x8
24 TFBGA
-40~85C
Yes
3V
64Mb
200MHz
x8
WLCSP
-40~85C
-
1.8V
64Mb
200MHz
x8
24 TFBGA
-40~85C
Yes
1.8V
64Mb
200MHz
x8
24 TFBGA
-40~85C
Yes
3V
128Mb
200MHz
x8
24 TFBGA
-40~85C
Yes
1.8V
128Mb
200MHz
x8
24 TFBGA
-40~85C
Yes
3V
128Mb
200MHz
x16
49 WFBGA
-40~85C
-
1.35V-1.8V
128Mb
200MHz
x16
WLCSP
-40~85C
-
1.35V-1.8V
256Mb
200MHz / 250MHz
x8
24 TFBGA
-40~85C
Yes
1.8V
256Mb
200MHz
x8
WLCSP
-40~85C
-
1.8V
256Mb
200MHz
x16
WLCSP
-40~85C
-
1.8V
256Mb
200MHz / 250MHz
x16
49 WFBGA
-40~85C
-
1.8V
512Mb
200MHz / 250MHz
x8
24 TFBGA
-40~85C
Yes
1.8V
512Mb
200MHz / 250MHz
x8
49 WFBGA
-40~85C
-
1.8V

...Become an expert in HYPERRAM!

Watch Winbond Webinar to...

Low Power DRAM

Low Power DRAM

Winbond mobile DRAM devices support both x16 and x32 data widths. Major features for the families of products shown in the table below include the following : Sequential or Interleave burst, High Clock rat, Standard Self Refresh, Partial-Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh Rate (ATCSR), Deep Power-Down (DPD), and Programmable output buffer driver strength.

Winbond Low Power DRAM DDR4/4X
Mode
Density
Description
Package
Automotive
PSRAM
64Mb
X16, ADM 1.8V, 133/166Mbps(SDR), 200/266/333Mbps(DDR)
BGA49
-
LPSDR/DDR
256Mb
X16 1.8V, 333/400Mbps(DDR)
BGA60
-
LPSDR/DDR
512Mb
X16, x32 1.8V, 133/166Mbps(SDR), 333/400Mbps(DDR)
BGA54, BGA60, BGA90
Yes
LPSDR/DDR
1Gb
X16, x32 1.8V, 333/400Mbps(DDR)
BGA60, BGA90
Yes
LPDDR2
512Mb
X16, x32 1.8/1.2V, 667/800/1066Mbps
BGA134
Yes
LPDDR2
1Gb
X16, x32 1.8/1.2V, 667/800/1066Mbps
BGA134
Yes
LPDDR2
2Gb
X16, x32 1.8/1.2V, 667/800/1066Mbps
BGA134
Yes
LPDDR3
512Mb (1)
X16, 1.8/1.2V, 1600/1866/2133Mbps
BGA178
-
LPDDR3
1Gb
X16, x32 1.8/1.2V, 1600/1866/2133Mbps
BGA178
-
LPDDR4/4x
1Gb
SDP, x16, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps
BGA100, GBA200
Yes
LPDDR4/4x
2Gb
SDP, x16, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps
BGA100, GBA200
Yes
LPDDR4/4x
2Gb
DDP, x32, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps
BGA200
Yes
LPDDR4/4x
4Gb (2)
SDP, x16, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps
BGA100, GBA200
-
LPDDR4/4x
4Gb
DDP, x32, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps
BGA200
Yes
LPDDR4/4x
8Gb (2)
DDP, x32, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps
BGA200
-

Note 1 : 512Mb LPDDR3 sample ready on 2024

Note 2 : SPD 4Gb LPDDR4/4X sample ready on 2024; DDP 8Gb LPDDR4/4X sample ready on 2024

Specialty DRAM

Winbond Electronics - Specialty DRAM

Specialty DRAM

Winbond’s Specialty DRAM, focusing on low and middle density, features characteristics of high performance and high speed and is widely used by leaders in the consumer, communication, computer peripheral, industrial, and automobile markets. Completed solution can be provided to variety customers.

SDR, DDR, DDR2, and DDR3 support for Industrial and automotive application with AEC-Q100, TS16949, ISO9001/14001, OHSAS18001 certificates.

Winbond Specialty DRAM DDR4 BGA78
Mode
Density
Description
Package
Automotive
DDR3/3L
1Gb
X8, x16 1.5V or 1.35V 1866/2133Mbps
BGA78 BGA96
Yes
DDR3/3L
2Gb
X8, x16 1.5V or/and 1.35V 1866/2133Mbps
BGA78 BGA96
Yes
DDR3/3L
4Gb
X8, x16 1.5V or/and 1.35V 1866/2133Mbps
BGA78 BGA96
Yes
DDR3/3L
8Gb
X16 DDP 1.5V and 1.35V 1866/2133Mbps
BGA96
-
DDR4 (1)
4Gb
X8, x16 1.2V 2666/3200Mbps
BGA78 BGA96
-
DDR4 (1)
8Gb
X8, x16 1.2V 2666/3200Mbps
BGA78 BGA96
-
DDR4 (1)
64Mb
X16 2.5V/3.3V 166/200Mbps
TSOP54 BGA54
Yes
SDRAM
128Mb
X16 2.5V/3.3V 166/200Mbps
TSOP54 BGA54
Yes
SDRAM
128Mb
X32(DDP) 2.5V/3.3V 166/200Mbps
BGA90
Yes
SDRAM
256Mb
X16 2.5V/3.3V 166/200Mbps
TSOP54 BGA54
Yes
SDRAM
256Mb
X32(DDP) 2.5V/3.3V 166/200Mbps
BGA90
Yes
DDR
64Mb
X16 2.5V 333/400Mbps
TSOP66
Yes
DDR
128Mb
X16 2.5V 333/400Mbps
TSOP66
Yes
DDR
256Mb
X16 2.5V 333/400Mbps
TSOP66
Yes
DDR2
128Mb
X16 1.8V 667/800/1066Mbps
BGA84
Yes
DDR2
256Mb
X8, X16 1.8V 667/800/1066Mbps
BGA60 BGA84
Yes
DDR2
512Mb
X8, X16 1.8V 667/800/1066Mbps
BGA60 BGA84
Yes
DDR2
1Gb
X8, X16 1.8V 667/800/1066Mbps
BGA60 BGA84
Yes
DDR2
2Gb
X8, X16 1.8V 667/800/1066Mbps
BGA60 BGA84
Yes

Note 1 : 4Gb DDR4 sample ready on 2024; 8Gb DDR4 sample ready on 2025

Security Flash

Winbond Electronics - Security Flash

TrustME®

TrustME®

Winbond TrustME® Secure Flash products strengthen the robustness by securing code and data storage for trusted boot and firmware updates using external secure flash. In an increasingly security conscious world, robust solutions for trusted boot and firmware updates are indispensable to IoT security foundation. Winbond’s Common Criteria certified production site guarantees secured production, software programming, and key provisioning for connected systems.

Winbond TrustME
Product
Density
Security Level
W77Q
16Mb, 32Mb, 64Mb, 128Mb
- CC EAL 2+ - SESIP Level 2 (with IEC 62443 and NIST 8259A ready) - ISO 26262 ASIL-C ready - ISO 21434 - FIPS 140-3 ACVTS - FIPS 140-3 CMVP
W75F
4MB, 16Mb, 32Mb
- CC EAL 5+, PP0117 complaint - PSA Certified Level 2 ready - SESIP Level 3 + Physical Attacker - ISO 26262 ASIL-D
W76S
16Mb, 32Mb
- CC EAL 5+ - EMVCo - CFNR

...Become an expert in SECURE MEMORY!

Watch Winbond Webinar to...

Code Storage Flash

Winbond Electronics - Code Storage Flash

Serial NOR Flash 3V

Serial NOR Flash
Voltage
Density
Description
Automotive
3V
2Mb
Dual SPI, 104MHz
Yes
3V
2Mb
Quad SPI, 104MHz
Yes
3V
4Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
4Mb
Dual SPI, 104MHz
Yes
3V
4Mb
Quad SPI, 104MHz
Yes
3V
8Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
8Mb
Quad SPI, 104MHz
Yes
3V
16Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
32Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
64Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
128Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
256Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
512Mb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
1Gb
Quad SPI, QPI, 133MHz, DTR
Yes
3V
2Gb
Quad SPI, QPI, 133MHz, DTR
Yes

Serial NOR Flash 1.8V

Voltage
Density
Description
Automotive
1.8V
4Mb
Quad SPI, 104MHz
Yes
1.8V
2Mb
Quad SPI, 104MHz
Yes
1.8V
8Mb
Quad SPI, 104MHz
Yes
1.8V
16Mb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
32Mb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
64Mb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
128Mb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
256Mb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
512Mb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
1Gb
Quad SPI, QPI, 133MHz, DTR
Yes
1.8V
2Gb
Quad SPI, QPI, 133MHz, DTR
Yes

Serial NOR Flash 1.2V

Voltage
Density
Description
Automotive
1.2V
8Mb
Quad SPI, QPI, 80MHz
-
1.2V
16Mb
Quad SPI, QPI, 80MHz
-
1.2V
32Mb
Quad SPI, QPI, 80MHz
-
1.2V
64Mb
Quad SPI, QPI, 80MHz
-
1.2V
128Mb
Quad SPI, QPI, 80MHz
-
1.2V
256Mb
Quad SPI, QPI, 80MHz
-
1.2V
512Mb
Quad SPI, QPI, 80MHz
-
RPMC SpiFlash

RPMC SpiFlash®

Density
Description
Automotive
64Mb
1.8V, Quad SPI, QPI, RPMC, 104MHz
-
64Mb
3V, Quad SPI, QPI, RPMC, 104MHz
-
128Mb
1.8V, Quad SPI, QPI, RPMC, 104MHz
-
128Mb
3V, Quad SPI, QPI, RPMC, 104MHz
-
256Mb
1.8V, Quad SPI, QPI, RPMC, 104MHz
-
256Mb
3V, Quad SPI, QPI, RPMC, 104MHz
-
512Mb
1.8V, Quad SPI, QPI, RPMC, 104MHz
-
512Mb
3V, Quad SPI, QPI, RPMC, 104MHz
-
Octal Flash Family

Octal Flash Family

Flash
Density
Description
Automotive
NAND
1Gb
1.8V, Octal SPI, DTR, 120MHz
Yes
NAND
2Gb
1.8V, Octal SPI, DTR, 120MHz
Yes
NAND
4Gb
1.8V, Octal SPI, DTR, 120MHz
Yes
NOR
512Mb
1.8V, Octal SPI, DTR, 200MHz
Yes
NOR
1Gb
1.8V, Octal SPI, DTR, 200MHz
Yes
NOR
2Gb
1.8V, Octal SPI, DTR, 200MHz
Yes
SpiStack Flash® Family

SpiStack Flash® Family

NOR
NAND
Description
Automotive
16Mb
1Gb
1.8V 104MHz, Continuous Read
-
16Mb
1Gb
3V 104MHz, Continuous Read
-
32Mb
1Gb
1.8V 104MHz, Continuous Read
-
32Mb
1Gb
3V 104MHz, Continuous Read
-
64Mb
1Gb
1.8V 104MHz, Continuous Read
-
64Mb
1Gb
3V 104MHz, Continuous Read
-
128Mb
1Gb
1.8V 104MHz, Continuous Read
-
128Mb
1Gb
3V 104MHz, Continuous Read
-
512Mb (256Mbx2)
1.8V, Quad SPI, QPI, DTR, 104MHz
-
512Mb (256Mbx2)
3V, Quad SPI, QPI, DTR, 104MHz
-
QspiNAND Flash

QspiNAND Flash

Density
Description
Automotive
512Mb
1.8V, QspiNAND
Yes
512Mb
3V, QspiNAND
Yes
1Gb
1.8V, QspiNAND
Yes
1Gb
1.8V, QspiNAND, DTR
Yes
1Gb
3V, QspiNAND
Yes
2Gb
1.8V, QspiNAND
Yes
2Gb
1.8V, QspiNAND, DTR
Yes
2Gb
3V, QspiNAND
Yes
4Gb
1.8V, QspiNAND
-
4Gb
3V, QspiNAND
-
SLC NAND Flash Memory

SLC NAND Flash Memory

Density
Description
Automotive
1Gb
1.8V, x8, ONFi
Yes
1Gb
3V, x8, ONFi
Yes
2Gb
1.8V, x8, ONFi
Yes
2Gb
3V, x8, ONFi
Yes
4Gb
1.8V, x8, ONFi
Yes
4Gb
3V, x8, ONFi
Yes
8Gb
1.8V, x8, ONFi
-
8Gb
3V, x8, ONFi
Yes
SLC NAND+LPDDR2 MCP

SLC NAND+LPDDR2 MCP

Package Ball Out
SLC NAND: Density
SLC NAND: I/O
LPDDR2: Density
LPDDR2: I/O
162 (8x10.5x1.0)
1Gb
8
512Mb
32
162 (8x10.5x1.0)
1Gb
8
1Gb
32
162 (8x10.5x1.0)
2Gb
8
1Gb
32
162 (8x10.5x1.0)
2Gb
8
2Gb
32
162 (8x10.5x1.0)
4Gb
8
2Gb
32
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